features trenchfet power mosfet applications load switch ? pc ? game machine si3467dv vishay siliconix new product document number: 72658 s-40238?rev. b, 16-feb-04 www.vishay.com 1 p-channel 20-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) ? 20 0.054 @ v gs = ? 10 v ? 5.0 ? 20 0.094 @ v gs = ? 4.5 v ? 3.8 (1, 2, 5, 6) d (4) s (3) g p-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm ordering information: si3467dv-t1?e3 (llead free) marking code: 7cxxx absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state unit drain-source voltage v ds ? 20 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d ? 5.0 ? 3.8 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 70 c i d ? 3.9 ? 3.0 a pulsed drain current i dm ? 25 a continuous source current (diode conduction) a i s ? 1.7 ? 0.95 maximum power dissipation a t a = 25 c p d 2.0 1.14 w maximum power dissipation a t a = 70 c p d 1.3 0.73 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec r 50 62.5 maximum junction-to-ambient a steady state r thja 90 110 c/w maximum junction-to-foot (drain) steady state r thjf 30 36 c/w notes a. surface mounted on 1? x 1? fr4 board.
si3467dv vishay siliconix new product www.vishay.com 2 document number: 72658 s-40238?rev. b, 16-feb-04 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 1.0 ? 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = ? 20 v, v gs = 0 v ? 1 a zero gate voltage drain current i dss v ds = ? 20 v, v gs = 0 v, t j = 85 c ? 5 a on-state drain current a i d(on) v ds ? 5 v, v gs = ? 10 v ? 25 a drain source on state resistance a r ds( ) v gs = ? 10 v, i d = ? 5 a 0.042 0.054 drain-source on-state resistance a r ds(on) v gs = ? 4.5 v, i d = ? 1.1 a 0.073 0.094 forward transconductance a g fs v ds = ? 15 v, i d = ? 5 a 10 s diode forward voltage a v sd i s = ? 1.7 a, v gs = 0 v ? 0.8 ? 1.2 v dynamic b total gate charge q g 8.7 13 gate-source charge q gs v ds = ? 10 v, v gs = ? 10 v, i d = ? 5.0 a 1.7 nc gate-drain charge q gd 2.5 gate resistance r g f = 1 mhz 9 turn-on delay time t d(on) 10 15 rise time t r v dd = ? 10 v, r l = 10 15 25 turn-off delay time t d(off) v dd = ? 10 v , r l = 10 i d ? 1 a, v gen = ? 10 v, r g = 6 22 35 ns fall time t f 18 30 source-drain reverse recovery time t rr i f = ? 1.7 a, di/dt = 100 a/ s 20 40 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 5 10 15 20 25 0123456 0 5 10 15 20 25 012345 v gs = 10 thru 6 v t c = ? 55 c 125 c 4 v 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 3 v 5 v
si3467dv vishay siliconix new product document number: 72658 s-40238?rev. b, 16-feb-04 www.vishay.com 3 typical characteristics (25 c unless noted) ? on-resistance ( r ds(on) ) 0 100 200 300 400 500 600 700 800 048121620 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0246810 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 5 10 15 20 25 v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 10 v i d = 5 a i d ? drain current (a) v gs = 10 v i d = 5 a v gs = 10 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0246810 t j = 150 c i d = 5 a 30 10 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s v gs = 4.5 v t j = 25 c i d = 1.1 a
si3467dv vishay siliconix new product www.vishay.com 4 document number: 72658 s-40238?rev. b, 16-feb-04 typical characteristics (25 c unless noted) 0 50 10 power (w) single pulse power time (sec) 20 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 ? 0.4 ? 0.2 0.0 0.2 0.4 0.6 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j ? temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 90 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 100 600 10 10 ? 1 10 ? 2 10 ? 3 30 40 safe operating area v ds ? drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse ? drain current (a) i d p(t) = 10 dc 0.1 i dm limited i d(on) limited r ds(on) limited bv dss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001
si3467dv vishay siliconix new product document number: 72658 s-40238?rev. b, 16-feb-04 www.vishay.com 5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
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